[1]梁爱梅,凌朝东.电流镜型二次曲率补偿的带隙基准源设计[J].华侨大学学报(自然科学版),2010,31(3):267-271.[doi:10.11830/ISSN.1000-5013.2010.03.0267]
　LIANG Ai-mei,LING Chao-dong.Design of a Bandgap Voltage Reference Based a Current Mirror with Curvature-Compensated[J].Journal of Huaqiao University(Natural Science),2010,31(3):267-271.[doi:10.11830/ISSN.1000-5013.2010.03.0267]
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电流镜型二次曲率补偿的带隙基准源设计()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第31卷
期数:
2010年第3期
页码:
267-271
栏目:
出版日期:
2010-05-20

文章信息/Info

Title:
Design of a Bandgap Voltage Reference Based a Current Mirror with Curvature-Compensated
文章编号:
1000-5013(2010)03-0267-05
作者:
梁爱梅; 凌朝东
华侨大学信息科学与工程学院; 厦门市专用集成电路系统重点实验室
Author(s):
LIANG Ai-mei1; 2;  LING Chao-dong1; 2
1.College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China; 2.Key Laboratory of ANSIC and System, Xiamen 361008, China
关键词:
带隙基准;  曲率补偿;  平均温度系数;  电源抑制比
Keywords:
bandgap reference;  curvature-compensated;  temperature coefficient;  power supply rejection ratio
分类号:
TN432
DOI:
10.11830/ISSN.1000-5013.2010.03.0267
文献标志码:
A
摘要:
为提高基准源的温度系数、电压调整率和电源抑制比,采用0.6μm标准CMOS工艺,设计一种采用电流镜复制技术的带隙基准源.仿真结果表明,电路具有结构简单、启动性能好、电压输出灵活稳定、温度范围宽等特点,能够满足模拟集成电路的要求.在3种工艺角模型,-50~+195℃温度变化范围内,其温度系数约为1.632×10-5℃-1,电源抑制比为-70 dB; 而在4.5~6.5 V的电源范围内,其电压调整率为4.0×10-4.
Abstract:
To improve the temperature coefficient,adjusting rate of voltage and power supply rejection ratio of bandgap voltage reference,a novel circuit using the current-replication technique is designed in 0.6 μm CMOS process.The presented circuit is simple,and has good performance on startup.Furthermore,this circuit can work well in a wide temperature range and exhibits good flexibility and stability output of voltage.All these features are satisfied the requirement of analog integrated circuit.The simulation results show that the temperature coefficient is 1.632×10-5 ℃-1 with temperature changed from-50 ℃ to +195 ℃,the power supply rejection ratio can achieve-70 dB,and the adjusting rate of voltage is 4.0×10-4 with the supply voltage in the rage of 4.5~6.5 V.All these results are obtained at three different process corners(TT,FF,SS).

参考文献/References:

[1] BEHZAD R, 陈贵灿. 模拟COMS集成电路设计 [M]. 西安:西安交通大学出版社, 2002.
[2] 凌朝东, 曾德友, 李国刚. 铅酸蓄电池充电与保护集成电路的设计 [J]. 华侨大学学报(自然科学版), 2008(3):338-341.
[3] BLAUSCHILD R A, TUCCI P A, MULLER R S. A new NMOS temperature stable voltage reference [J]. IEEE Journal of Solid-State Circuits, 1978, (12):767-774.
[4] 应建华, 彭颖, 陈嘉. 一种BICMOS带隙基准电压源的设计 [J]. 华中科技大学学报(自然科学版), 2006(3):65-67.doi:10.3321/j.issn:1671-4512.2006.03.019.
[5] 王新亚, 解光军. 一种高精度曲率补偿CMOS带隙基准的设计 [J]. 合肥工业大学学报(自然科学版), 2007, (12):1702-1704.doi:10.3969/j.issn.1003-5060.2007.12.037.
[6] HASTINGS A, HASTINGS R A. The art of analog layout [M]. New Jersey:Prentice-Hall, Inc, 2001.

备注/Memo

备注/Memo:
福建省自然科学基金资助项目(T0850005); 厦门市科技计划项目(3502Z20080010)
更新日期/Last Update: 2014-03-23