[1]林建斌,林来金.电子器件劣化的物理特性分析[J].华侨大学学报(自然科学版),1997,18(3):238-242.[doi:10.11830/ISSN.1000-5013.1997.03.0238]
　Lin Jianbin,Lin Laijin.Degradation of Electronic Device as Shown by the Analysis of Its Physical Character[J].Journal of Huaqiao University(Natural Science),1997,18(3):238-242.[doi:10.11830/ISSN.1000-5013.1997.03.0238]
点击复制

电子器件劣化的物理特性分析()
分享到：

《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第18卷
期数:
1997年第3期
页码:
238-242
栏目:
出版日期:
1997-07-20

文章信息/Info

Title:
Degradation of Electronic Device as Shown by the Analysis of Its Physical Character
作者:
林建斌; 林来金
华侨大学电气技术系, 泉州 362011
Author(s):
Lin Jianbin;  Lin Laijin
关键词:
电子器件;  半导体器件;  隧道效应
Keywords:
electronic device;  semiconductor device;  degradation
分类号:
TN601
DOI:
10.11830/ISSN.1000-5013.1997.03.0238
摘要:
从理化角度讨论电子器件产生劣化与故障的原因和后果,提出防止或减少电子器件劣化的设施,促使电子器件按规范要求正常运行,有效地发挥其固有功能并延长使用寿命.
Abstract:
The causality of the degradation of electronic device is discussed from the angle of physical characteristic ahalysis. Countering various faults arising from degradation and their serious consequences, the authors put forward some facilities to prevent an
更新日期/Last Update: 2014-03-22