[1]林赏心,郭亨群.含纳米硅粒SiO2薄膜的光致发光[J].华侨大学学报(自然科学版),2006,27(1):35-38.[doi:10.3969/j.issn.1000-5013.2006.01.009]
　Lin Shangxin,Guo Hengqun.The Photoluminescence of SiO2 Films Contained Nano Silicon Particles[J].Journal of Huaqiao University(Natural Science),2006,27(1):35-38.[doi:10.3969/j.issn.1000-5013.2006.01.009]
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含纳米硅粒SiO2薄膜的光致发光()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第27卷
期数:
2006年第1期
页码:
35-38
栏目:
出版日期:
2006-01-20

文章信息/Info

Title:
The Photoluminescence of SiO2 Films Contained Nano Silicon Particles
文章编号:
1000-5013(2006)01-0035-04
作者:
林赏心; 郭亨群
华侨大学信息科学与工程学院; 华侨大学信息科学与工程学院 福建泉州362021; 福建泉州362021
Author(s):
Lin Shangxin;  Guo Hengqun
College of Information Science and Engineering, Huaqiao University, 362021, Quanzhou, China
关键词:
磁控溅射;  纳米硅;  光致发光;  量子限制效应
Keywords:
magnetron sputtering;  nano silicon particles;  photoluminescence;  quantum confinement
分类号:
TB383.1
DOI:
10.3969/j.issn.1000-5013.2006.01.009
文献标志码:
A
摘要:
采用RF磁控溅射技术制备含纳米硅的SiO2薄膜.通过对Si-SiO2复合靶的比分进行调节控制,并在不同的温度下进行高温退火得到不同粒径的纳米硅.利用XRD对样品进行分析得出纳米硅的平均粒径; 对样品测量光致发光谱,其发光峰分别位于361 nm和430 nm,比较发现光致发光的峰位随比分的改变有微小的蓝移.文中对发光机理进行初步讨论.
Abstract:
The SiO2 films contained nano silicon particles are prepared by using magnetron sputtering technique.The nano silicon particles with different particle diameter are obtained by adjusting and controlling the score of Si-SiO2 complex target and processing in high temperature annealing under different temperature.By using X ray diffraction to analyze the sample,the averaged particle diameters of nano silicon particles are obtained.The photo luminescence spectrum of the sample is measured,and the peaks of luminescence at 361 nm and 430 nm are compared.The peak of photoluminescence is found to have a little blue-shift with the change of score.The mechanism of its photoluminescence is discussed.

参考文献/References:

[1] Hirschman K D, Tsybeskov L, Duttagupta S P. Silicon-based visible light-emitting devices integrated into microelectronic circuits [J]. Nature, 1996, (6607):338-341.doi:10.1038/384338a0.
[2] Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Applied Physics Letters, 1990, (10):1046-1047.
[3] Chan S, Fauchet P M. Tunable, narrow, and directional luminescence from porous silicon light emitting devices [J]. Applied Physics Letters, 1999, (2):274-276.doi:10.1063/1.124346.
[4] Pavesi L, Negro L D, Mazzoleni C. Optical gain in silicon nanocrystals [J]. Nature, 2000.440-444.
[5] Zachai R, Eberl K, Abstreiter G. Photoluminescence in short-period Si/Ge strained-layer superlattices [J]. Physical Review Letters, 1990.1055-1058.doi:10.1103/PhysRevLett.64.1055.
[6] Leong D, Harry M, Resson K J. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm [J]. Nature, 1997, (6634):686-688.doi:10.1038/42667.
[7] Wai L N, Lourenco M A, Gwilliam R M. An efficient room-temperature silicon-based light-emitting diode [J]. Nature, 2001, (6825):192-194.doi:10.1038/35065571.
[8] 吴雪梅, 董业民, 汤乃云. 富Si-SiO2薄膜的制备、结构及光致发光特性的研究 [J]. 苏州大学学报(自然科学版), 2001(1):64.doi:10.3969/j.issn.1000-2073.2001.01.012.
[9] 芬德勒 J H, 项金钟. 纳米粒子与纳米结构薄膜 [M]. 北京:化学工业出版社, 2003.184-187.
[10] 张立德, 牟季美. 纳米材料和纳米结构 [M]. 北京:科学出版社, 2001.147-148.
[11] 沈学础. 半导体光谱和光学性质 [M]. 北京:科学出版社, 2002.288-290.
[12] Qin Guogang, Jia Yongqiang. Mechanism of the visible luminescence in porous silicon [J]. Solid State Communications, 1993.559.
[13] Liao Liangsheng, Bao Ximao, Zheng Xiangqin. Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon [J]. Applied Physics Letters, 1996(6):850.doi:10.1063/1.116554.

相似文献/References:

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备注/Memo

备注/Memo:
国家自然科学基金资助项目(60336010)
更新日期/Last Update: 2014-03-23