[1]陶马冠宇,尹玉,陈鑫,等.掺杂预合成添加剂对氧化锌压敏电阻性能影响[J].华侨大学学报(自然科学版),2022,43(2):216-221.[doi:10.11830/ISSN.1000-5013.202012031]
　TAO Maguanyu,YIN Yu,CHEN Xin,et al.Effect of Doped Pre-Synthesized Additives on Performance of ZnO Varistor[J].Journal of Huaqiao University(Natural Science),2022,43(2):216-221.[doi:10.11830/ISSN.1000-5013.202012031]
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掺杂预合成添加剂对氧化锌压敏电阻性能影响()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第43卷
期数:
2022年第2期
页码:
216-221
栏目:
出版日期:
2022-03-08

文章信息/Info

Title:
Effect of Doped Pre-Synthesized Additives on Performance of ZnO Varistor
文章编号:
1000-5013(2022)02-0216-06
作者:
陶马冠宇1;  尹玉1;  陈鑫1;  刘凌云1;  常雨芳1;  柳建军2
1. 湖北工业大学 太阳能高效利用湖北省协同创新中心, 湖北 武汉 430068;2. 襄阳市三三电气有限公司, 湖北 枣阳 441200
Author(s):
TAO Maguanyu1;  YIN Yu1;  CHEN Xin1;  LIU Lingyun1;  CHANG Yufang1;  LIU Jianjun2
1. Solar Energy Efficient Use of Hubei Province Collaborative Innovation Center, Hubei University of Technology, Wuhan 430068, China; 2. Xiangyang Sansan Electric Company Limited, Zaoyang 441200, China
关键词:
氧化锌压敏电阻;  预合成添加剂;  BiSbO4掺杂;  Zn2SiO4掺杂;  电学性能;  常规烧结
Keywords:
zinc oxide varistor;  pre-synthetic additives;  BiSbO4 doping;  Zn2SiO4 doping;  electrical performance;  conventional sintering
分类号:
TN304.21
DOI:
10.11830/ISSN.1000-5013.202012031
文献标志码:
A
摘要:
为了提高氧化锌(ZnO)压敏电阻的电学性能,采用常规烧结并在ZnO压敏电阻中掺杂预先合成的BiSbO4和Zn2SiO4,研究不同掺杂比例对ZnO压敏电阻的微观结构、电学性能、通流能力的影响.结果表明:ZnO压敏电阻在掺杂BiSbO4和Zn2SiO4后,能够有效抑制ZnO晶粒变大,晶体结构变得致密均匀,致密性有所提高,有效提高压敏特性和通流能力.BiSbO4和Zn2SiO4掺杂比例为3∶1的样品综合性能比较优异,样品的致密度为5.58 g·cm-3,压敏电位梯度达到425 V·mm-1,非线性系数为70,漏电流为1.2×10-7 A·cm-2,能量耐受能力达到334.21 J·cm-3,残压比为2.5.
Abstract:
In order to improve the electrical properties of ZnO Varistors, the pre-synthesized BiSbO4 and Zn2SiO4 were prepared and doped in the ZnO varisistor by conventional sintering. The effect of the different doping ratios on the microstructure, electrical properties and surge absorption capability of ZnO varistors were studied. It is shown that after ZnO varistor is doped with BiSbO4 and Zn2SiO4, we can effectively prevent the ZnO crystal grains from becoming larger, and the crystal structure becomes dense and uniform, and the density is improved, which effectively improves the pressure-sensitive characteristy and surge current capability. The overall performance of the sample with the doping ratio of BiSbO4 and Zn2SiO4 of 3∶1 is relatively excellent. The density of the sample is 5.58 g·cm-3, the varistor potential gradient reaches 425 V·mm-1, nonlinear coefficient is 70, the leakage current is 1.2×10-7 A·cm-2, the energy capacity reaches 334.21 J·cm-3, and the residual voltage ratio is 2.5.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期: 2020-12-16
通信作者: 刘凌云(1970-),男,教授,博士,博士生导师,主要从事人工电磁介质、非线性绝缘材料和超衍射光刻技术的研究.E-mail:liu_lingyun33@163.com.
基金项目: 国家自然科学基金资助项目(61903129)
更新日期/Last Update: 2022-03-20