[1]潘书万,庄琼云,郑力新.硅衬底上多层Ge/ZnO纳米晶薄膜的制备及光学特性[J].华侨大学学报(自然科学版),2018,39(5):696-700.[doi:10.11830/ISSN.1000-5013.201801049]
　PAN Shuwan,ZHUANG Qiongyun,ZHENG Lixin.Preparation and Optical Properties of Multilayer Ge/ZnO Nanocrystalline Film on Silicon Substrate[J].Journal of Huaqiao University(Natural Science),2018,39(5):696-700.[doi:10.11830/ISSN.1000-5013.201801049]
点击复制

硅衬底上多层Ge/ZnO纳米晶薄膜的制备及光学特性()
分享到：

《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第39卷
期数:
2018年第5期
页码:
696-700
栏目:
出版日期:
2018-09-20

文章信息/Info

Title:
Preparation and Optical Properties of Multilayer Ge/ZnO Nanocrystalline Film on Silicon Substrate
文章编号:
1000-5013(2018)05-0696-05
作者:
潘书万1;  庄琼云2;  郑力新1
1. 华侨大学 工学院, 福建 泉州 362021;2. 黎明职业大学 信息与电子工程学院, 福建 泉州 362000
Author(s):
PAN Shuwan1;  ZHUANG Qiongyun2;  ZHENG Lixin1
1. College of Engineering, Huaqiao University, Quanzhou 362021, China; 2. College of Information and Electronic Engineering, Liming Vocational University, Quanzhou 362000, China
关键词:
纳米晶;  Ge/ZnO多层薄膜;  硅衬底;  光致发光;  射频磁控溅射;  快速热退火
Keywords:
nanocrystalline;  Ge/ZnO multilayer film;  silicon substrate;  photoluminescence;  radio frequency magnetron sputtering;  rapid thermal annealing
分类号:
O472
DOI:
10.11830/ISSN.1000-5013.201801049
文献标志码:
A
摘要:
采用射频磁控溅射技术和快速热退火方法在Si(100)衬底上制备多层Ge/ZnO纳米晶薄膜.Ge纳米晶的大小随着退火温度的增加,从2.9 nm增加到5.3 nm.光致发光谱测试发现两个发光峰,分别位于1.48,1.60 eV左右.研究发现:位于1.48 eV 处的发光峰来源于ZnO相关的氧空位或富锌结构的缺陷发光,位于1.60 eV 处的发光峰随着退火温度的增大向短波长移动,该发光峰应该来源于GeO发光中心.
Abstract:
The multilayer Ge/ZnO nanocrystalline films were fabricated on Si(100)substrates by radio frequency magnetron sputtering and rapid thermal-annealing. The size of Ge nanocrystalline increased from 2.9 nm to 5.3 nm with increasing temperature. Two photoluminescence peaks located at 1.48 eV and 1.60 eV were observed. The study found that the peak located at 1.48 eV is attributed to the defects emission of the oxygen vacancies or zinc interstitial in ZnO, and the other peak located at 1.60 eV is attributed to the emission center of the GeO, which shifts to the short wavelength with the temperature increasing.

参考文献/References:

[1] DEY P P,KHARE A.Fabrication of photoluminescentnc-Si: SiO2 thin films prepared by PLD[J].Physical Chemistry Chemical Physics,2017,19(32):21436-21445.DOI:10.1039/c7cp03815a.
[2] LIU Wei,LU Tiecheng,CHEN Qingyun,et al.Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping[J].Progress in Natural Science: Materials International,2014,24(3):226-231.DOI:10.1016/j.pnsc.2014.04.005.
[3] CAROLAN D.Recent advances in germanium nanocrystals: Synthesis, optical properties and applications[J].Progress in Materials Science,2017,90:128-158.DOI:10.1016/j.pmatsci.2017.07.005.
[4] 陈虎,王加贤.Ge/Al-SiO2薄膜材料的非线性光学特性[J].华侨大学学报(自然科学版),2012,33(4):380-383.DOI:10.11830/ISSN.1000-5013.2012.04.0380.
[5] 王燕飞,王加贤,张培,等.纳米Ge-SiO2薄膜对1 342 nm激光的被动调Q[J].华侨大学学报(自然科学版),2011,32(4):385-388.DOI:10.11830/ISSN.1000-5013.2011.04.0385.
[6] MAEDA Y,TSUKAMOTO N,YAZAWA Y,et al.Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices[J].Appl Phys Lett,199,59(24):3168-3170.DOI:10.1063/1.105773.
[7] FRAJ I,FAVRE L,DAVID T,et al.Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals[J].Applied Surface Science,2017,419:476-483.DOI:10.1016/j.apsusc.2017.05.025.
[8] MEDEROS M,MESTANZA S N M,LANG R,et al.Germanium nanoparticles grown at different deposition times for memory device applications[J].Thin Solid Films,2016,611:39-45.DOI:10.1016/j.tsf.2016.05.026.
[9] GAO Fei,GREEN M A,CONIBEER G,et al.Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing[J].Nanotechnology,2008,19(45):455611.DOI:10.1088/0957-4484/19/45/455611.
[10] TYSCHENKO I E,VOLODIN V A,CHERKOV A G,et al.Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing[J].Solid State Communications,2016,247:53-57.DOI:10.1016/j.ssc.2016.07.012.
[11] BAHARIQUSHCHI R,GUNDOGDU S,AYDINLI A.Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers[J].Superlattices and Microstructures,2017,104:308-315.DOI:10.1016/j.spmi.2017.02.037.
[12] PARMAR N S,CHOI J W,BOATNER L A,et al.Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO[J].Journal of Alloys and Compounds,2017,729:1031-1037.DOI:10.1016/j.jallcom.2017.09.239.
[13] BATRA Y,KABIRAJ D,KANJILAL D.Charge retention and optical properties of Ge nanocrystals embedded in GeO2 matrix[J].Solid State Communications,2007,143(4/5):213-216.DOI:10.1016/j.ssc.2007.05.026.
[14] 马书懿,张伯蕊,秦国刚.含纳米锗粒二氧化硅薄膜的光致发光研究[J].物理学报,1998,47(3):502-507.
[15] RAHIM A F A,HASHIM M R,RUSOP M,et al.Room temperature Ge and ZnO embedded inside porous silicon using conventional methods for photonic application[J].Superlattices and Microstructures,2012,52(5):941-948.DOI:10.1016/j.spmi.2012.07.018.
[16] TU N,TUAN N T,NGUYEN V D,et al.Near-infrared emission from ZnO nanorods grown by thermal evaporation[J].Journal of Luminescence,2014,156:199-204.DOI:10.1016/j.jlumin.2014.08.018.
[17] REBOHLE L,BORANY J V,YANKOV RA,et al.Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers[J].Appl Phys Lett,1997,71(19):2809-2811.DOI:10.1063/1.120143.
[18] HE Peng,WANG Chong,LI Chen,et al.Optical properties of the low-energy Ge-implanted and annealed SiO2 films[J].Optical Materials,2015,46:491-496.DOI:10.1016/j.optmat.2015.05.008.

相似文献/References:

[1]毛兴宇,戴乐阳,柯志坚,等.机械合金化制备的Fe-Co-Nb-B纳米晶材料磁性[J].华侨大学学报(自然科学版),2007,28(1):51.[doi:10.3969/j.issn.1000-5013.2007.01.014]
　MAO Xing-yu,DAI Le-yang,KE Zhi-jian,et al.The Magnetic Properties of Fe-Co-Nb-B Nanocrystal Alloys Made by Mechanical Alloying[J].Journal of Huaqiao University(Natural Science),2007,28(5):51.[doi:10.3969/j.issn.1000-5013.2007.01.014]

备注/Memo

备注/Memo:
收稿日期: 2018-01-14
通信作者: 潘书万(1982-),男,讲师,博士,主要从事光电子材料与器件的研究.E-mail:shuwanpan@hqu.edu.cn.
基金项目: 福建省自然科学基金面上资助项目(2015J01655); 福建省教育厅科研基金(A类)资助项目(JA14025, JA13429); 福建省泉州市科技计划资助项目(2016G051); 华侨大学科研基金资助项目(12BS226)
更新日期/Last Update: 2018-09-20