[1]苏道军,计伟,崔碧峰,等.布拉格反射波导双光束边发射半导体激光器[J].华侨大学学报(自然科学版),2015,36(2):151-155.[doi:10.11830/ISSN.1000-5013.2015.02.0151]
　SU Dao-jun,JI Wei,CUI Bi-feng,et al.Twin Beam Edge-Emitting Semiconductor Laser withBragg Reflection Waveguide[J].Journal of Huaqiao University(Natural Science),2015,36(2):151-155.[doi:10.11830/ISSN.1000-5013.2015.02.0151]
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布拉格反射波导双光束边发射半导体激光器()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第36卷
期数:
2015年第2期
页码:
151-155
栏目:
出版日期:
2015-03-20

文章信息/Info

Title:
Twin Beam Edge-Emitting Semiconductor Laser withBragg Reflection Waveguide
文章编号:
1000-5013(2015)02-0151-05
作者:
苏道军1; 2;  计伟2;  崔碧峰2; 3;  邱伟彬1;  佟存柱4;  张松2;  王晓玲2;  凌小涵2;  王加贤1
1. 华侨大学 信息科学与工程学院, 福建 厦门 361021;2. 北京工业大学 电子信息与控制工程学院, 北京 100124;3. 牡丹电子集团有限公司, 北京 100191;4. 中国科学院 长春光学精密机械与物理研究所, 吉林 长春 130000
Author(s):
SU Dao-jun1; 2;  JI Wei2;  CUI Bi-feng2; 3;  QIU Wei-bin1;  TONG Cun-zhu4;  ZHANG Song2;  WANG Xiao-ling2;  LING Xiao-han2;  WANG Jia-xian1
1. College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China; 2. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China; 3. Beijing Peony Electronic Group Company, Beijing 100191, China; 4. Changchun Institute of Optics, Fine Mechanics and Physics Chinese Academy of Sciences, Changchun 130000, China
关键词:
半导体激光器;  布拉格反射波导;  双光斑激光器;  多量子阱
Keywords:
semiconductor lasers;  Bragg reflection waveguide;  twin-beam lasers;  multiple quantum wells
分类号:
TN48.4
DOI:
10.11830/ISSN.1000-5013.2015.02.0151
文献标志码:
A
摘要:
报道1种在垂直远场方向上产生2个极窄的稳定对称光斑多量子阱边发射半导体激光器,在其有源区两侧设计布拉格反射波导结构.制备100 μm条宽的边发射激光器,在垂直方向±33.4°附近实现2个稳定的7.2°对称的近圆形光斑,对器件镀膜后进行测试,在连续和脉冲工作条件下分别得到1.40,2.26 W的输出,器件的特征温度可达到91 K.
Abstract:
A multiple quantum wells edge-emitting semiconductor laser which can generate twin ultra-narrow, stable and symmetrical beams in the far field vertical direction was designed and fabricated. The Bragg reflection waveguide structure was designed on both side of the active layer. Laser with 100 μm stripe width exhibited two stable near-circular beams symmetrically located at about ±33.4° with full-width at half maximum of 7.2° in the vertical direction. Texting the laser after coating, which showed an output power of 1.40 W under continuous wave operation and 2.26 W in pulsed mode. The characteristic temperature of the device is about 91 K.

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备注/Memo

备注/Memo:
收稿日期: 2013-12-26
通信作者: 王加贤(1955-),男,教授,博士,主要从事激光与光电子技术的研究.E-mail:wangjx@hqu.edu.cn.
基金项目: 集成光电子学国家重点联合实验室开放课题(IOSKL2012KF12); 半导体材料科学重点实验室开放课题(KLSMS-1201); 福建省泉州市科技计划重点项目(2003Z19)
更新日期/Last Update: 2015-03-20