[1]吕晓敏,邱伟彬,王加贤.利用SiCl4/Ar/H2气体ICP干法刻蚀GaAs材料[J].华侨大学学报(自然科学版),2013,34(2):139-142.[doi:10.11830/ISSN.1000-5013.2013.02.0139]
　LYU Xiao-min,QIU Wei-bin,WANG Jia-xian.ICP Dry Etching GaAs Materials by Using SiCl4/Ar/H2 Gases[J].Journal of Huaqiao University(Natural Science),2013,34(2):139-142.[doi:10.11830/ISSN.1000-5013.2013.02.0139]
点击复制

利用SiCl4/Ar/H2气体ICP干法刻蚀GaAs材料()
分享到：

《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第34卷
期数:
2013年第2期
页码:
139-142
栏目:
出版日期:
2013-03-20

文章信息/Info

Title:
ICP Dry Etching GaAs Materials by Using SiCl4/Ar/H2 Gases
文章编号:
1000-5013(2013)02-0139-04
作者:
吕晓敏;  邱伟彬;  王加贤
华侨大学 信息科学与工程学院, 福建 厦门 361021
Author(s):
LYU Xiao-min;  QIU Wei-bin;  WANG Jia-xian
College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China
关键词:
GaAs;  干法刻蚀;  电感耦合等离子体;  SiCl4;  光滑表面
Keywords:
GaAs;  plasma etching;  inductively coupled plasma;  SiCl4;  smooth surface
分类号:
TN405.98
DOI:
10.11830/ISSN.1000-5013.2013.02.0139
文献标志码:
A
摘要:
利用SiCl4/Ar/H2气体的电感耦合等离子体(ICP)干法刻蚀GaAs材料,研究反应气体流量、样品室压力、源功率RF1和RF2等参数对刻蚀速率的影响.结果表明:在反应气体SiCl4,Ar和H2的流量分别为2,4,1 mL·min-1,样品室压力为0.400 Pa,RF1和RF2的功率分别为120,500 W的最佳优化参数下,得到的刻蚀速率为486 nm·min-1,且同时满足垂直而光滑的台面.利用该优化后的配方刻蚀GaAs衬底10 min后,得到大面积的光滑表面,其粗糙度为0.20 nm.
Abstract:
Inductively coupled dry etching of GaAs materials with SiCl4/H2/Ar gases. The effect of etching rate as function of gas flows, chamber pressure, source power RF1 and RF2 was investigated. The results show that the best optimization parameters are SiCl4 flow at 2 mL·min-1, Ar flow at 4 mL·min-1, H2 flow at 1 mL·min-1, chamber pressure at 0.400 Pa, RF1 at 120 W and RF2 at 500 W.In this condition, vertical mesas with ultra smooth surfaces were obtained with an etching rate of 468 nm·min-1. An large area smooth surface with surface roughness of 0.20 nm was achieved after 10 minutes etching with optimal parameters.

参考文献/References:

[1] LEE J W,JUNG P G,DEVRE M,et al.Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers[J].Solid-State Electronics,2002,46(5):685-688.
[2] CHOQUETTE K D,SHUL R J,HOWARD A J,et al.Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment[J].Journal of Vacuum and Science and Technology B,1995,13(1):40-42.
[3] ROMMEL S L,JANG J H,LU W,et al.Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication[J].Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,2002,20(4):1327-1330.
[4] BERG E W,PANG S W.Electrical and optical characteristics of etch induced damage in InGaAs[J].Journal of Vacuum Science and Technology B,1999,17(6):2745-2749.
[5] BOUCHOULE S,PATRIARCHE G,GUILET S,et al.Sidewall passivation assisted by a silicon coverplate during Cl2-H2 and HBr inductively coupled plasma etching of InP for photonic devices[J].Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,2008,26(2):666-674.
[6] LEE K H,GUIKET S,SAGNES I,et al.Reduced features two-dimensional photonic crystals on InP-based materials etched using Cl/sub2/Ar inductively coupled plasma[J].IPRM,2007,1(1):222-225.
[7] NAMAM P S,FERRERIA L M,LEE T Y.Study of grass formation in GaAs backside via etching using inductively coupled plasma system[J].Journal of Vacuum Science and Technology B,2000,18(6):2780-2784.
[8] LEE J W,DEVRE M W,REELFS B H,et al.Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas[J].Journal of Vacuum Science and Technology A,2000,18(4):1220-1224.

备注/Memo

备注/Memo:
收稿日期: 2012-04-05
通信作者: 王加贤(1954-),男,教授,主要从事激光技术与固体激光器件的研究.E-mail:wangjx@hqu.edu.cn.
基金项目: 福建省自然科学基金资助项目(2012J1277); 华侨大学高层次人才启动基金资助项目(07170406)
更新日期/Last Update: 2013-03-20