[1]吴丽丽.高电源噪声抑制比带隙基准源设计[J].华侨大学学报(自然科学版),2012,33(3):265-268.[doi:10.11830/ISSN.1000-5013.2012.03.0265]
　WU Li-li.Design of the Bandgap Reference with High Power Supply Rejection Ratio[J].Journal of Huaqiao University(Natural Science),2012,33(3):265-268.[doi:10.11830/ISSN.1000-5013.2012.03.0265]
点击复制

高电源噪声抑制比带隙基准源设计()
分享到：

《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第33卷
期数:
2012年第3期
页码:
265-268
栏目:
出版日期:
2012-05-20

文章信息/Info

Title:
Design of the Bandgap Reference with High Power Supply Rejection Ratio
文章编号:
1000-5013(2012)03-0265-04
作者:
吴丽丽
华侨大学信息科学与工程学院
Author(s):
WU Li-li
College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China
关键词:
带隙基准源;  电源噪声抑制比;  低工作电压;  低功耗;  模拟IP
Keywords:
bandgap reference;  power supply rejection ratio;  low working voltage;  low-power consumption;  analog intellectual property
分类号:
TN431.1
DOI:
10.11830/ISSN.1000-5013.2012.03.0265
文献标志码:
A
摘要:
采用CSMC 0.35μm工艺,通过在电源和带隙基准源电路间插入电流源缓冲级的方法,设计提高带隙基准源电源噪声抑制能力的带隙基准源.在最低工作电压不变的情况下,所设计的带隙基准电源大幅度提高了电路的电源抑制比,且功耗低.仿真结果表明:电源抑制比值为110dB/40dB,Iq=12μA,Vmin=2.4V,可作为模拟IP(知识产权)且易集成于单片系统中.
Abstract:
A band-gap voltage reference with a high power supply rejection ratio(PSSR) is designed by using CSMC 0.35 μm processing through the method of inserting current source buffer stage between power and band-gap reference circuit.The proposed band-gap reference greatly improve the circuit`s PSRR and with a low power cost,without changing the lowest working voltage.The simulation results show that,the PSRR with 100 dB/40 dB,Iq=12 μA,Vmin=2.4 V,which can be used as analog intellectual property(IP) and easily integrated in the system on a chip(SOC).

参考文献/References:

[1] DING Qi-yuan, FENG Liang, HOU Peng. A high-PSR low-power voltage regulating circuit for wireless capsule endoscopy [A]. 上海:IEEE, 2010.590-592.
[2] HENG S, PHAM C K. Improvement of LDO’s PSRR deteriorated by reducing power consumption:Implementation and experimental results [A]. Austin:IEEE, 2009.11-15.
[3] TEEL J C. Understangding power supply ripple rejecton in linear regulators [J]. Analog Applicationgs Journal, 2005, (2Q):8-10.
[4] JIANG Yue-ming, LEE E K F. Design of low-voltage bandgap reference using transimpedance amplifier [J]. IEEE Journal of Solid-State Circuits, 2000(6):552-555.
[5] MALCOVATI P, MALOBERTI F, FIOCCHI C. Curvature-compensated BiCMOS bandgap with 1 V supply voltage [J]. IEEE Journal of Solid-State Circuits, 2001(7):1076-1081.
[6] HENG S, PHAM C K. A low-power high-PSRR low-dropout regulator with bulk-gate controlled circuit [J]. IEEE Transactions on Circuits and Systems (Ⅱ):Express Briefs, 2010(4):245-249.
[7] HENG S, PHAN C K. Compensated circuit for low dropout regulator having stable load regulation after consideration of bonding wire resistance [A]. Seville:IEEE, 2007.120-123.
[8] WONG K, EVANS D. A 150 mA low noise, high PSRR low-dropout linear regulator in 0, 13 μm technology for RF SOC applications [A]. Montreux:IEEE, 2007.532-535.
[9] 梁爱梅, 凌朝东. 流镜型二次曲率补偿的带隙基准源设计 [J]. 华侨大学学报(自然科学版), 2010(3):261-271.doi:10.1063/1.3421555.
[10] GIUSTOLISI G, PALUMBO G. A detailed analysis of power-supply noise attenuation in bandgap voltage references [J]. IEEE Transactions on Circuits and Systems (Ⅰ):Fundament Theory and Applications, 2003(2):185-197.

备注/Memo

备注/Memo:
华侨大学科研基金资助项目(10HZR05)
更新日期/Last Update: 2014-03-23