[1]曾友华,郭亨群.富纳米硅氮化硅薄膜光致发光机制[J].华侨大学学报(自然科学版),2007,28(2):147-150.[doi:10.3969/j.issn.1000-5013.2007.02.010]
　ZENG You-hua,GUO Heng-qun.Photoluminescence Mechanism of Silicon-Rich Silicon Nitride Thin Films[J].Journal of Huaqiao University(Natural Science),2007,28(2):147-150.[doi:10.3969/j.issn.1000-5013.2007.02.010]
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富纳米硅氮化硅薄膜光致发光机制()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第28卷
期数:
2007年第2期
页码:
147-150
栏目:
出版日期:
2007-04-20

文章信息/Info

Title:
Photoluminescence Mechanism of Silicon-Rich Silicon Nitride Thin Films
文章编号:
1000-5013(2007)02-0147-04
作者:
曾友华; 郭亨群
华侨大学信息科学与工程学院; 华侨大学信息科学与工程学院 福建泉州362021; 福建泉州362021
Author(s):
ZENG You-hua;  GUO Heng-qun
College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China
关键词:
纳米硅;  氮化硅薄膜;  光致发光;  发光机制
Keywords:
nanoscale silicon particles;  siticon nitride thin films;  photoluminescence;  luminescence mechanism
分类号:
O484.41
DOI:
10.3969/j.issn.1000-5013.2007.02.010
文献标志码:
A
摘要:
对于富纳米硅氮化硅薄膜的光致发光,其电子-空穴对存在3类光激发-光发射过程.通过对富纳米硅氮化硅薄膜光致发光模型的数值模拟对比分析,提出富纳米硅氮化硅薄膜光致发光是量子限制模型和能隙态模型发光机制共同作用的结果.利用得到的结论,讨论一些已报道的富纳米硅氮化硅薄膜光致发光实验结果.
Abstract:
There are three types of photoexcitation-photoemission processes for electron-holes in the photoluminescence from silicon-rich silicon nitride thin films.In this paper,based on the comparative analysis of the numerical simulation of photoluminescence mechanism models for siliconrich silicon nitride thin films,we suggest that photoluminescence of silicon-rich silicon nitride thin films is a result of the quantum confinement model photoluminescence mechanism and the energy gap states model photoluminescence mechanism operating together,and use the obtained conclusion we discuss some photoluminescence experimental results reported about silicon-rich silicon nitride thin films.

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备注/Memo

备注/Memo:
国家自然科学基金重点资助项目(60336010,60678053)
更新日期/Last Update: 2014-03-23