[1]吴丽清,郭亨群,黄美纯,等.应变Ge1-yCy合金的带隙[J].华侨大学学报(自然科学版),2002,23(1):19-22.[doi:10.3969/j.issn.1000-5013.2002.01.005]
　Wu Liqing,Guo Hengqun,Huang Meichun,et al.Band Gap of Strained Ge1-yCy Alloy[J].Journal of Huaqiao University(Natural Science),2002,23(1):19-22.[doi:10.3969/j.issn.1000-5013.2002.01.005]
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应变Ge1-yCy合金的带隙()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第23卷
期数:
2002年第1期
页码:
19-22
栏目:
出版日期:
2002-01-20

文章信息/Info

Title:
Band Gap of Strained Ge1-yCy Alloy
文章编号:
1000-5013(2002)01-0019-04
作者:
吴丽清; 郭亨群; 黄美纯; 朱梓忠
华侨大学信息科学与工程学院; 厦门大学物理系; 厦门大学物理系 泉州362011; 泉州362011; 厦门361005; 厦门361005
Author(s):
Wu Liqing1;  Guo Hengqun1;  Huang Meichun2;  Zhu Zizhong2
1.College of Info. Sci. & Eng., Huaqiao Univ., 362011, Quanzhou; 2.Dept. of Phys., Xiamen Univ., 361005, Xiamen
关键词:
Ge1-yCy;  从头赝势法;  应变;  带隙
Keywords:
Ge 1-yC y;  ab initio pseudopotential method;  strain;  band gap
分类号:
TN304.24
DOI:
10.3969/j.issn.1000-5013.2002.01.005
文献标志码:
A
摘要:
采用基于局域密度泛函理论和虚晶近似下的从头赝势法,研究 Si(0 0 1)和 Ge(0 0 1)衬底上的应变 Ge1-y Cy 合金,其带隙随碳含量和晶格失配度的变化情况 .结果发现,带隙对应变条件非常敏感 .硅衬底上应变 Ge1-y Cy 合金的带隙随碳组分的增加而增加,而锗衬底上应变 Ge1-y Cy 合金的带隙随碳组分的增加而减小
Abstract:
A theoretical study is made on the change of the band gaps of strain Ge 1-yC y alloy grown on Si(001) and Ge(001) substrates with carbon content and lattice mismatch. The study is made by adopting ab initio pseudopotential method which is based on local density functional theory and is under virtual-crystal approximation. As discovered by the results, the band gap is very sensitive to strain condition. The band gap of strain Ge 1-yC y alloy on Si substrate increases with the increase of carbon constituent, whereas the band gap of strain Ge 1-yC y alloy Ge substrate decreases with the increase of carbon constituent.

备注/Memo

备注/Memo:
国家自然科学基金资助项目; 国家高技术发展计划基金资助项目; 福建省青年科技人才创新科研基金资助项目; 华侨大学科研基金资助项目
更新日期/Last Update: 2014-03-23