[1]郭亨群.氯化铜溶液中多孔硅光致发光猝灭[J].华侨大学学报(自然科学版),1995,16(2):141-144.[doi:10.11830/ISSN.1000-5013.1995.02.0141]
Guo Hengqun.A Study on the Photoluminescence of Porous Silicon in Copper Chloride Solution[J].Journal of Huaqiao University(Natural Science),1995,16(2):141-144.[doi:10.11830/ISSN.1000-5013.1995.02.0141]
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氯化铜溶液中多孔硅光致发光猝灭(
)
《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]
- 卷:
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第16卷
- 期数:
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1995年第2期
- 页码:
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141-144
- 栏目:
-
- 出版日期:
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1995-04-20
文章信息/Info
- Title:
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A Study on the Photoluminescence of Porous Silicon in Copper Chloride Solution
- 作者:
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郭亨群
-
华侨大学电气技术系
- Author(s):
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Guo Hengqun
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-
- 关键词:
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多孔硅; 光致发光猝灭; 表面和界面; 氯化铜
- Keywords:
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porous silicon; photoluminescence quenching; surface and interface; copper chloride
- 分类号:
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TN204
- DOI:
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10.11830/ISSN.1000-5013.1995.02.0141
- 摘要:
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研究氯化铜溶液中多孔硅光致发光猝灭的机制.瞬态光致发光和傅里叶变换红外光谱表明钢-多孔硅界面电子态提供了非辐射复合的途径.
- Abstract:
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A study is made on the photoluminescence quenching of porous silicon in copper chloride solution,laying emphasis on the mec anism. As shown by transient photoluminescence and ourier-transform infrared absorption, the localized electronic state at Cu/porou
更新日期/Last Update:
2014-03-22