[1]吴建国,刘士毅.用光伏法及红外吸收法分析硅单晶质量[J].华侨大学学报(自然科学版),1992,13(3):336-342.[doi:10.11830/ISSN.1000-5013.1992.03.0336]
　Wu Jianguo,Liu Shiyi,Huaqiao University,et al.Quality Analysis of Silicon Monocrystal by IR Absorption Method and Photovoltaic Method[J].Journal of Huaqiao University(Natural Science),1992,13(3):336-342.[doi:10.11830/ISSN.1000-5013.1992.03.0336]
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用光伏法及红外吸收法分析硅单晶质量()
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《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]

卷:
第13卷
期数:
1992年第3期
页码:
336-342
栏目:
出版日期:
1992-07-20

文章信息/Info

Title:
Quality Analysis of Silicon Monocrystal by IR Absorption Method and Photovoltaic Method
作者:
吴建国; 刘士毅
华侨大学; 厦门大学
Author(s):
Wu Jianguo;  Liu Shiyi;  Huaqiao University;  Xiamen University
关键词:
硅单晶;  光伏;  红外吸收;  少子扩散长度;  氧含量;  碳含量;  基线
Keywords:
silicon monocrystal;  photovoltaic;  carbon content;  baseline
DOI:
10.11830/ISSN.1000-5013.1992.03.0336
摘要:
本文用光伏法测定样品的少子扩散长度,论证放宽直线拟合的T.S.Moss条件,用红外吸收法测定样品的氧、碳含量并样品的品质,实验发现,硅单晶的红外吸收光谱(a-λ-1)的基线愈高,则其中的少子扩散长度愈短; 反之亦然,还探讨了基线的物理性质。
Abstract:
For analysing the quality of silicon monocrystal, the minor diffusion length of the sample is determined by photovoltaic method and the T. S. Moss condition for widening the linear-fitting is deminstrated; oxygen and carbon contents of the sample are dete
更新日期/Last Update: 2014-03-22