[1]郭亨群.活性反应蒸发制备氢化非晶硅的稳态光电导和复合过程[J].华侨大学学报(自然科学版),1989,10(1):11-17.[doi:10.11830/ISSN.1000-5013.1989.01.0011]
Guo Hengqun.Steady-state Photoconductivity and Recombination of Amorphous Si:H Prepared by Reactive Evaporation[J].Journal of Huaqiao University(Natural Science),1989,10(1):11-17.[doi:10.11830/ISSN.1000-5013.1989.01.0011]
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活性反应蒸发制备氢化非晶硅的稳态光电导和复合过程(
)
《华侨大学学报（自然科学版）》[ISSN:1000-5013/CN:35-1079/N]
- 卷:
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第10卷
- 期数:
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1989年第1期
- 页码:
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11-17
- 栏目:
-
- 出版日期:
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1989-01-20
文章信息/Info
- Title:
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Steady-state Photoconductivity and Recombination of Amorphous Si:H Prepared by Reactive Evaporation
- 作者:
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郭亨群
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华侨大学应用物理系
- Author(s):
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Guo Hengqun
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- 关键词:
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光电导; 活性反应蒸发; 氢化非晶硅; 磷掺杂; 准费米能级; 定域态; 态密度; 掺杂浓度; 复合过程; 自由电子
- DOI:
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10.11830/ISSN.1000-5013.1989.01.0011
- 摘要:
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本文报告了用掺杂和轻度磷掺杂的活性反应蒸发,制备氢化作品硅的稳态光电导对温度及光强的依赖特性.在研究的样品中复合率由复合中心的陷获空穴对自由电子的俘获过程所限制,掺杂改变了定域态分布的形状,因而改变了光电导与光强关系的指数ν.掺杂也改变了费米能(?)的定域态密度,轻度的磷掺杂可以使光电导增大,,当磷掺杂使费米能级与导带扩展态距离小于0.25eV 时光电导反而变小.
- Abstract:
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For an undoped and slight phosphorus doped hydrogenated amorphous silicon(a-Si:H)film prepared by activated reactive evaporation,this paper points out the dependence of its photoconductivity on temperature and light intensity. In all of the investigated s
更新日期/Last Update:
2014-03-22